Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
In this paper, the performance of tunnel field-effect transistors (TFETs) based on 2-D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations.One of the major challenges of TFETs is their low ON-currents.2-D material-based TFETs can have tight gate control and high electric fields at the Stash Can